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TLE2022CDR 参数 Datasheet PDF下载

TLE2022CDR图片预览
型号: TLE2022CDR
PDF下载: 下载PDF文件 查看货源
内容描述: 神剑高速低功耗精密运算放大器 [EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS]
分类和应用: 运算放大器放大器电路光电二极管
文件页数/大小: 72 页 / 1491 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH SPEED LOW POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191C − FEBRUARY 1997 − REVISED APRIL 2007
D
D
D
D
D
D
Supply Current . . . 300
µA
Max
High Unity-Gain Bandwidth . . . 2 MHz Typ
High Slew Rate . . . 0.45 V/µs Min
Supply-Current Change Over Military Temp
Range . . . 10
µA
Typ at V
CC
±
=
±
15 V
Specified for Both 5-V Single-Supply and
±15-V
Operation
Phase-Reversal Protection
D
High Open-Loop Gain . . . 6.5 V/µV
D
D
D
D
(136 dB) Typ
Low Offset Voltage . . . 100
µV
Max
Offset Voltage Drift With Time
0.005
µV/mo
Typ
Low Input Bias Current . . . 50 nA Max
Low Noise Voltage . . . 19 nV/√Hz Typ
description
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers
using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with
highly improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic
improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both
time and temperature. This means that a precision device remains a precision device even with changes in
temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply
rail.
A variety of available options includes small-outline and chip-carrier versions for high-density systems
applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from − 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of −55°C to 125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1997−2007, Texas Instruments Incorporated
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
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