SLUS492H – JUNE 2001 – REVISED MAY 2013
ABSOLUTE MAXIMUM RATINGS
(1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
Analog input voltage (INA, INB)
Output body diode DC current (OUTA, OUTB)
I
OUT_DC
I
OUT_PULSE
D
MAX
not to exceed 16
0.2
0.2
4.5
1.14
2.12
780
16
UNIT
V
–0.3 to V
DD
+ 0.3 V
DC
Pulsed (0.5 µs)
Output current (OUTA, OUTB)
A
Power dissipation at T
A
= 25°C
D package
DGN package
P package
W
mW
V
V
°C
Output voltage (OUTA, OUTB)
V
DD
T
J
T
stg
Supply voltage
Junction operating temperature
Storage temperature
Lead temperature (soldering, 10 sec.)
(1)
(2)
–0.3
–55
–65
16
150
150
300
Stresses beyond those listed under
absolute maximum ratings
may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under
recommended operating
conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.
ELECTRICAL CHARACTERISTICS
V
DD
= 4.5 to 15 V, T
A
= T
J
(unless otherwise noted)
PARAMETER
INPUT (INA, INB)
V
IN_H
V
IN_L
Logic 1 input threshold
Logic 0 input threshold
Input current
OUTPUT (OUTA, OUTB)
Output current
V
OH
V
OL
High-level output voltage
Low-level output level
Output resistance high
Output resistance low
Latch-up protection
(1)
(2)
V
DD
= 14 V
(1)
V
OH
= V
DD
– V
OUT
, I
OUT
= –10 mA
I
OUT
= 10 mA
T
A
= 25°C, I
OUT
= –10 mA, V
DD
= 14 V
(2)
T
A
= full range, I
OUT
= –10 mA, V
DD
= 14 V
(2)
T
A
= 25°C, I
OUT
= 10 mA, V
DD
= 14 V
(2)
TEST CONDITIONS
MIN
2
TYP
MAX
UNIT
1
0 V
←
V
IN
←
V
DD
–10
4
300
22
25
18
1.9
1.2
500
2.2
30
450
45
35
42
2.5
4
10
V
µA
V
mV
Ω
T
A
= full range, I
OUT
= 10 mA, V
DD
= 14 V
(2)
mA
The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the
combined current from the bipolar and MOSFET transistors.
The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the R
DS(ON)
of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
Copyright © 2001–2013, Texas Instruments Incorporated
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