SLUS545D – NOVEMBER 2002 – REVISED MAY 2013
ELECTRICAL CHARACTERISTICS (Continued)
V
DD
= 4.5V to 15 V, T
A
= –40°C to 125°C,T
A
= T
J
(unless otherwise noted)
PARAMETER
ENABLE (ENBA, ENBB)
V
IN_H
V
IN_L
R
ENBL
t
D3
t
D4
High-level input voltage
Low-level input voltage
Hysteresis
Enable impedance
Propagation delay time (see
Propagation delay time (see
V
DD
= 14 V, ENBL = GND
C
LOAD
= 1.8 nF
C
LOAD
= 1.8 nF
INA = 0 V, INB = 0 V
UCC27423
INA = 0 V, INB = HIGH
INA = HIGH, INB = 0 V
INA = HIGH, INB = HIGH
INA = 0 V, INB = 0 V
I
DD
Static operating current,
V
DD
= 15 V,
ENBA = ENBB = 15 V
UCC27424
INA = 0 V, INB = HIGH
INA = HIGH, INB = 0 V
INA = HIGH, INB = HIGH
INA = 0 V, INB = 0 V
UCC27425
INA = 0 V, INB = HIGH
INA = HIGH, INB = 0 V
INA = HIGH, INB = HIGH
INA = 0 V, INB = 0 V
I
DD
Disabled, V
DD
= 15 V,
ENBA = ENBB = 0 V
All
INA = 0 V, INB = HIGH
INA = HIGH, INB = 0 V
INA = HIGH, INB = HIGH
(1)
(2)
LO to HI transition
HI to LO transition
1.7
1.1
0.15
75
2.4
1.8
0.55
100
30
100
900
750
750
600
300
750
750
1200
600
1050
450
900
300
450
450
600
2.9
2.2
0.90
140
60
150
1350
1100
1100
900
450
1100
1100
1800
900
1600
700
1350
450
700
700
900
μA
μA
μA
μA
kΩ
ns
V
(1) (2)
TEST CONDITION
MIN
TYP
MAX
UNITS
OVERALL
The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors.
The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
(a)
+5V
90%
90%
(b)
INPUT
INPUT
10%
0V
t
D1
16V
90%
OUTPUT
90%
t
F
t
D2
t
f
10%
t
F
t
D1
OUTPUT
90%
t
D2
t
F
10%
0V
10%
Figure 1. Switching Waveforms for (a) Inverting Driver and (b) Noninverting Driver
4
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