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T436416A-10SG 参数 Datasheet PDF下载

T436416A-10SG图片预览
型号: T436416A-10SG
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16 SDRAM [4M X 16 SDRAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 29 页 / 710 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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tm
TE
CH
T436416A
AC CHARACTERISTICS
(AC opterating conditions unless otherwise noted)
Parameter
CAS Latency = 3
CLK cycle time
CAS Latency = 2
CLK to valid
Output delay
CAS Latency = 3
CAS Latency = 2
Symbol
6
-6
Min
Max
-7
Min
Max
-7.5
Min
Max
-8
Min
Max
-10
Min
Max
Unit Note
ns
1
1K
7
9
1K 7.5 1K
9
6
6
2.5
2.5
2.5
1.75
1
1
6
6
6
6
6
6
8
10
-
-
2.5
3
3
2
1
1
-
-
1K
10
10
1K
t
CC
t
SAC
t
OH
t
CH
t
CL
t
SS
t
SH
t
SLZ
t
SHZ
8
-
-
2
2
2
1.5
1
1
-
-
5.5
6
5.5
6
-
-
2.5
2.5
2.5
1.75
1
1
-
-
6
7
-
-
2.5
3
3
2.5
1
1
7
9
ns
1
ns
ns
ns
ns
ns
ns
ns
2
3
3
3
3
2
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in CAS Latency = 3
Hi-Z
CAS Latency = 2
6
7
-
-
7
9
ns
ns
Note:
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns,transient time compensation should be considered,
i.e.,[(tr+tf)/2-1]ns should be added to the parameter.
TM Technology Inc. reserves the right
P.8
to change products or specifications without notice.
Publication Date: MAY. 2003
Revision: B