XC61H
Series
■ABSOLUTE
MAXIMUM RATINGS
PARAMETER
Input Voltage
Output Current
CMOS
Output Voltage
N-ch open drain
Power Dissipation
SOT-23
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
IN
I
OUT
RESTB
Pd
Topr
Tstg
RATINGS
12.0
50
V
SS
-0.3 ~V
IN
+0.3
V
SS
-0.3 ~ 12
250
-30�½�+80
-40�½�+125
Ta=25℃
UNITS
V
mA
V
mW
℃
℃
■ELECTRICAL
CHARACTERISTICS
PARAMETER
Detect Voltage
Hysteresis Width
SYMBOL
V
DF
V
HYS
V
IN
= 1.5V
V
IN
= 2.0V
V
IN
= 3.0V
V
IN
= 4.0V
V
IN
= 5.0V
V
DF
=1.6V�½�6.0V
V
IN
= 1.0V
V
IN
= 2.0V
V
IN
= 3.0V
V
IN
= 4.0V
V
IN
= 5.0V
V
IN
= 8.0V
-
I
LEAK
Nch Open Drain
Detect Voltage
Temperature Characteristics
Release Delay Time
(V
DR
→
RESEB inversion)
ΔV
DF
ΔTopr�½�V
DF
t
DR
V
IN
changes from 0.6V to 10V
V
IN
=10.0V, V
OUT
=10.0V
-
-
50
80
1
0.01
±100
-
-
-
0.1
-
200
400
50
ppm/℃
ms
CONDITIONS
MIN.
V
DF(T)
x 0.98
V
DF
x 0.02
-
-
-
-
-
0.7
1.0
3.0
5.0
6.0
7.0
TYP.
V
DF(T)
V
DF
x 0.05
0.9
1.0
1.3
1.6
2.0
-
2.2
7.7
10.1
11.5
13.0
-10.0
0.01
MAX.
V
DF(T)
x 1.02
V
DF
x 0.08
2.6
3.0
3.4
3.8
4.2
10.0
-
-
-
-
-
-2.0
-
μA
UNITS
V
V
Ta = 25℃
CIRCUIT
①
①
Supply Current
(*1)
I
SS
μA
②
Operating Voltage
V
IN
V
①
Output Current
I
OUT
N-ch, V
DS
= 0.5V
③
mA
P-ch, V
DS
=2.1V
(CMOS Output)
Leakage
Current
CMOS Output
④
③
-
⑤
V
DF
(T) is nominal detect voltage value
Release Voltage: V
DR
= V
DF
+ V
HYS
(*1) The supply current during power-start until output being stable (during release operation) is 2μA greater with comparison to the period
after the completion of release operation because of the shoot-through current in delay current.
3/13
TOREX [ TOREX SEMICONDUCTOR ]
