■
Electrical Characteristics
Drain Current vs. Drain/Source Voltage
40
10V
Pulse Test, Ta=25℃
Drain Current vs. Gate/Source Voltage
40
35
30
Pulse Test
35
30
5V
4.5V
4V
3.5V
Drain Current:Id (A)
25
20
15
10
5
0
0
1
2
3
4
5
Vgs=2.5V
Drain Current:Id (A)
3V
25
20
15
10
5
0
0
1
2
3
4
5
125℃
-55℃
Topr=25℃
Drain/Source Voltage:Vds (V)
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance
vs. Gate/Source Voltage
0.05
Pulse Test, Ta=25℃
Drain/Source On-State Resistance
vs. Drain Current
0.1
Pulse Test, Ta=25℃
Drain/Source On-State Resistance
:Rds (on) (Ω)
0.04
Drain/Source On-State Resistance
:Rds (on) (Ω)
Vgs=4.5V
10V
0.03
Id=10A
5A
u
0.01
0.02
0.01
0
0
2
4
6
8
10
0.001
0
10
20
30
40
Gate/Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain/Source On-State Resistance
vs. Ambient Temp.
0.05
Pulse Test
Gate/Source Cut Off Voltage Variance
vs. Ambient Temp.
0.8
Pulse Test, Ta=25℃
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
125
150
Drain/Source On-State Resistance
:Rds (on) (Ω)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
0.04
0.03
Id=10A
5A
5A, 10A
10V
0.02
Vgs=4.5V
0.01
0
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
125
150
Ambient Temp. :Topr (℃)
Ambient Temp. :Topr (℃)
363
TOREX [ TOREX SEMICONDUCTOR ]
