Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.045Ω (max)
NUltra
High-Speed Switching
NSOP-8
Package
NTwo
FET Devices Built-in
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP133A1145SR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds(on)=0.033Ω (Vgs=10V)
: Rds(on)=0.045Ω (Vgs=4.5V)
Ultra high-speed switching
Operational Voltage
: 4.5V
High density mounting
: SOP-8
■Pin Configuration
S1
１
G1
２
S2
３
８
７
６
５
■Pin Assignment
PIN
NUMBER
1
2
3
4
5~6
7~8
PIN
NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
D1
D1
D2
D2
G2
４
SOP-8
(TOP VIEW)
■Equivalent Circuit
１
２
３
４
N-Channel MOS FET
(2 devices built-in)
■Absolute Maximum Ratings
Ta=25°C
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
30
±20
6
20
6
2
150
-55~150
UNITS
V
V
A
A
A
W
°C
°C
11
８
７
６
５
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a glass epoxy PCB
759
TOREX [ TOREX SEMICONDUCTOR ]
