Power MOS FET
NP-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance : 0.075Ω (max)
NUltra
High-Speed Switching
NSOP-8
Package
N2
FET Devices Built-in
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP134A1275SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds (on) = 0.075Ω ( Vgs = -4.5V )
: Rds (on) = 0.115Ω ( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting
: SOP-8
■Pin Configuration
S1
1
G1
2
S2
3
G2
4
SOP-8
(TOP VIEW)
8
7
6
5
■Pin Assignment
PIN
NUMBER
1
2
3
4
5~6
7~8
PIN
NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
D1
D1
D2
D2
■Equivalent Circuit
1
2
3
4
P-Channel MOS FET
( 2 devices built-in )
■Absolute Maximum Ratings
Ta=25
O
C
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Tch
Tstg
150
- 55 ~ 150
O
11
UNITS
V
V
A
A
A
W
C
C
8
7
6
5
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
RATINGS
- 20
+1 2
- 4.5
- 18
- 4.5
2
O
( note ) : When implemented on a glass epoxy PCB
783