015AZ2.0~015AZ24
TOSHIBA Diode
Silicon Epitaxial Planar Type
015AZ2.0~015AZ24
Constant-Voltage Regulation Applications
Small package
Nominal voltage tolerance of about ±2.5%
(2.0 V~24 V)
Unit: mm
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P*
T
j
T
stg
Rating
150
125
−55~125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
* Mounted on a glass-epoxy circuit board of 20 × 20 mm,
Pad dimensions of 4 × 4 mm.
JEDEC
JEITA
TOSHIBA
―
―
1-1G1A
Weight: 1.4 mg (typ.)
Electrical Characteristics
(See pages 2~3.)
Marking
VZ additional ranking
upper --- X rank , middle --- Y rank , lower --- Z rank
Voltage rank
24
Decimal point
: VZ = (VZ ranking voltage) X 0.1, nil: VZ = VZ ranking
Example 1: 015AZ2.4-X
24
Example 2: 015AZ2.4-Z
24
Example 3: 015AZ12-X
12
Pin Assignment
(Top View)
1
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
