015DZ5.1
TOSHIBA Diode Silicon Epitaxial Planar Type
015DZ5.1
Constant-Voltage Regulation Applications
Small package
Unit: mm
0.6±0.05
CATHODE
カ�½ードマーク
MARK
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
150*
150
−55
to 150
Unit
mW
°C
°C
M
A
0.1
0.8±0.05
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc.).
0.07
0.1
0.2
±0.05
0.1±0.05
0.48
-0.03
+0. 02
fSC
JEDEC
JEITA
TOSHIBA
Weight: 0.6 mg (typ.)
―
―
1-1L1A
Pad Dimensions (Reference)
0.85
0.26
0.21
Unit: mm
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Reverse current
Dynamic Impedance
Knee Dynamic Impedance
Symbol
V
Z
I
R
Z
Z
Z
ZK
Test Condition
I
Z
= 5 mA
V
R
= 1.5 V
I
Z
= 5 mA
I
Z
= 0.5 mA
Min
4.97
―
―
―
Typ.
―
―
―
―
Max
5.24
1
70
500
Unit
V
μA
Ω
Ω
Marking
Equivalent Circuit
(Top View)
1
2008-10-08
1.0±0.05
A
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
