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1SS427 参数 Datasheet PDF下载

1SS427图片预览
型号: 1SS427
PDF下载: 下载PDF文件 查看货源
内容描述: 超高速开关应用 [Ultra-High Speed Switching Applications]
分类和应用: 整流二极管开关光电二极管
文件页数/大小: 4 页 / 222 K
品牌: TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
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1SS427
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS427
Ultra-High Speed Switching Applications
0.6±0.05
0.1
Unit: mm
2-pin compact package: Ideal for high-density mounting
Low forward voltage: V
F (3)
= 0.98 V (typ.)
Fast reverse recovery time: t
rr
= 1.6 ns (typ.)
Small total capacitance: C
T
= 0.5 pF (typ.)
C A TH O D E M AR K
A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
200
100
1
150 *
150
−55
to 150
Unit
V
V
mA
mA
A
mW
°C
°C
0.1
0.07
M
A
0.2
±0.05
0.8±0.05
0.1±0.05
0.48
+0.02
-0.03
fSC
JEDEC
JEITA
1-1L1A
TOSHIBA
Weight: 0.6 mg (typ.)
* : Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Cu pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 30 V
V
R
= 80 V
V
R
= 0, f = 1 MH
z
I
F
= 10 mA, Fig.1
Min
Typ.
0.62
0.75
0.98
0.5
1.6
Max
1.20
0.1
0.5
μA
pF
ns
V
Unit
1
2008-01-30
1.0±0.05