2SK2962
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
−π−MOSV)
2
2SK2962
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Enhancement mode
: R
DS (ON)
= 0.5
Ω
(typ.)
: |Y
fs
| = 1.2 S (typ.)
Unit: mm
Low leakage current : I
DSS
= 100
μA
(max) (V
DS
= 100 V)
: V
th
= 0.8~2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
100
100
±20
1
3
0.9
137
1
0.09
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
TO-92MOD
—
2-5J1C
Weight: 0.36 (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
Symbol
R
th (ch−a)
Max
138
Unit
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 25 V, T
ch
= 25°C (initial), L = 221 mH, R
G
= 25
Ω,
I
AR
= 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-11-20
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
