2SK3078A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3078A
VHF/UHF Band Amplifier Applications
Unit: mm
Output power: P
o
≥
28.0dBmW
Gain: G
p
≥
8.0dB
Drain Efficiency:
ηD ≥
50%
·
·
·
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Symbol
V
DSS
V
GSS
I
D
P
D
(Note 1)
T
ch
T
stg
Rating
10
5
0.5
3
150
−45~150
Unit
V
V
A
W
°C
°C
Note 1: Tc = 25°C
JEDEC
JEITA
TOSHIBA
―
SC-62
2-5K1D
Marking
U W
Electrical Characteristics
(Ta = 25°C)
Characteristics
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Symbol
P
O
ηD
G
p
V
th
I
DSS
I
GSS
(Note 2)
¾
Test Condition
V
DS
= 4.5 V, Iidle = 50 mA
(V
GS
= adjust)
f = 470 MHz, P
i
= 20dBmW
Z
G
= Z
L
== 50
Ω
V
DS
= 4.8 V, I
D
= 0.5 mA
V
DS
= 10 V, V
GS
= 0 V
V
GS
= 5 V, V
DS
= 0 V
V
DS
= 6.5 V, f = 470 MHz,
P
i
= 20dBmW,
P
o
= 28.0dBmW (V
GS
= adjust)
VSWR LOAD 10:1 all phase
Min
28.0
50
8.0
0.20
¾
¾
Typ.
¾
¾
¾
¾
¾
¾
Max
¾
¾
¾
1.20
10
5
Unit
dBmW
%
dB
V
µA
µA
¾
Load mismatch
No degradation
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 2: When the RF output power test fixture is used
1
2002-01-09
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
