DF2S12FS
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S12FS
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
0.6±0.05
Unit: mm
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
2terminal ultra small package suitable for mounting on small space.
CATHODE MARK
A
0.1
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P*
T
j
T
stg
Rating
150
150
−55~150
Unit
mW
°C
°C
fSC
0.1
Absolute Maximum Ratings
(Ta = 25°C)
0.07
M
A
0.2
±0.05
0.8±0.05
0.1±0.05
0.48
+0.02
-0.03
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
⎯
operating temperature/current/voltage, etc.) are within the
TOSHIBA
1-1L1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.0006 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*:
Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm
Pad Dimension(Reference)
Unit: mm
0.85
0.26
0.21
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
V
Z
Z
Z
I
R
C
T
Test
Circuit
―
―
―
―
Test Condition
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 9 V
V
R
= 0 V, f = 1 MHz
Min
11.4
―
―
―
Typ.
12.0
―
―
15
Max
12.6
25
0.05
―
Unit
V
Ω
μA
pF
1
2007-11-01
1.0±0.05