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DF2S8.2S 参数 Datasheet PDF下载

DF2S8.2S图片预览
型号: DF2S8.2S
PDF下载: 下载PDF文件 查看货源
内容描述: 产品仅用于为防止静电放电( ESD ) 。 [Product for Use Only as Protection against Electrostatic Discharge (ESD).]
分类和应用:
文件页数/大小: 3 页 / 121 K
品牌: TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
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DF2S8.2S
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S8.2S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
2terminal ultra small package suitable for mounting on small space.
CATHODE MARK
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
150*
150
−55~150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
operating temperature/current/voltage, etc.) are within the
TOSHIBA
1-1K1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.001 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*:
Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
V
Z
Z
Z
I
R
C
T
Test Condition
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 6.5 V
V
R
=
0 V, f
=
1 MHz
Min
7.7
Typ.
8.2
20
Max
8.7
30
0.5
Unit
V
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(contact discharge)
ESD Immunity Level
Marking
7
Equivalent Circuit
(Top View)
±30 kV
Criterion: No damage to device elements
1
2007-11-01