GT10J303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
GT10J303
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Third-generation IGBT
Enhancement mode type
High speed
Low saturation voltage
: tf = 0.30μs (Max.) (I
C
= 10A)
: V
CE
(sat) = 2.7V (Max.) (I
C
= 10A)
Unit: mm
FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate-Emitter Voltage
Collector Current
Emitter−Collector Forward
Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
DC
1ms
DC
1ms
SYMBOL
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
RATING
600
±20
10
20
10
20
30
150
−55~150
UNIT
V
V
A
A
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight:
⎯
⎯
2-10R1C
g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
10J303
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-10-31
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
