MP4210
TOSHIBA Power MOS FET Module
Silicon N Channel MOS Type (Four L
2
-π-MOSV inOne)
MP4210
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
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4-V gate drivability
Small package by full molding (SIP 10 pins)
High drain power dissipation (4-device operation)
: P
T
= 4 W (Ta = 25°C)
Low drain-source ON resistance: R
DS (ON)
= 0.12
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.)
Low leakage current: I
GSS
= ±10
μA
(max) (V
GS
= ±16 V)
I
DSS
= 100
μA
(max) (V
DS
= 60 V)
Enhancement-mode: V
th
= 0.8 to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Industrial Applications
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
DT
E
AS
I
AR
1-device
operation
E
AR
E
ART
T
ch
T
stg
Rating
60
60
±20
5
20
2.0
4.0
129
5
0.2
mJ
0.4
150
−55
to 150
°C
°C
Unit
V
V
V
A
W
W
mJ
A
JEDEC
JEITA
TOSHIBA
―
―
2-25A1C
Weight: 2.1 g (typ.)
Drain power dissipation
(1-device operation, Ta = 25°C)
Drain power dissipation
(4-device operation, Ta = 25°C)
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive avalanche
energy
(Note 2) 4-device
operation
Channel temperature
Storage temperature range
Note 1: Condition for avalanche energy (single pulse) measurement
V
DD
= 25 V, starting T
ch
= 25°C, L = 7 mH, R
G
= 25
Ω,
I
AR
= 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-10-27
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
