MP4305
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4305
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Industrial Applications
Unit: mm
·
·
·
·
·
Small package by full molding (SIP 12 pin)
High collector power dissipation (4 devices operation)
: P
T
= 4.4 W (Ta = 25°C)
High collector current: I
C (DC)
=
−5
A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
=
−5
V, I
C
=
−3
A)
Diode included for absorbing fly-back voltage.
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Continuous base current
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
−100
−100
−6
−5
−8
−0.5
2.2
Unit
V
V
V
A
A
W
JEDEC
JEITA
TOSHIBA
―
―
2-32C1E
Weight: 3.9 g (typ.)
P
T
T
j
T
stg
4.4
150
−55
to 150
W
°C
°C
Array Configuration
R1 R2
6
5
8
12
7
1
2
3
4
9
10
11
R1
≈
4.5 kΩ R2
≈
300
Ω
1
2002-11-20
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
