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RN1963FS 参数 Datasheet PDF下载

RN1963FS图片预览
型号: RN1963FS
PDF下载: 下载PDF文件 查看货源
内容描述: 开关,逆变电路,接口电路及驱动电路的应用 [Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications]
分类和应用: 开关驱动
文件页数/大小: 8 页 / 137 K
品牌: TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
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RN1961FS~RN1966FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FS,RN1962FS,RN1963FS
RN1964FS,RN1965FS,RN1966FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
Unit: mm
Two devices are incorporated into a fine pitch Small Mold (6 pin)
0.35 0.35
1.0±0.05
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
0.7±0.05
package.
1
2
3
6
5
4
0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1961FS
RN1962FS
R2
RN1963FS
RN1964FS
E
RN1965FS
RN1966FS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
0.48
-0.04
+0.02
Complementary to RN2961FS~RN2966FS
B
R1
fS6
JEDEC
JEITA
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
2-1F1C
TOSHIBA
Weight: 0.001 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1961FS~
1966FS
RN1961FS~
1964FS
Emitter-base voltage
RN1965FS,
1966FS
Symbol
V
CBO
V
CEO
Rating
20
20
10
V
EBO
5
I
C
P
C
(Note 1)
T
j
T
stg
50
50
150
−55~150
mA
mW
°C
°C
V
1
2
3
Unit
V
V
Q1
Q2
Equivalent Circuit
(top view)
6
5
4
Collector current
Collector power dissipation RN1961FS~
RN1966FS
Junction temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01