RN2501~RN2506
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2501,RN2502,RN2503
RN2504,RN2505,RN2506
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Including two devices in SMV (super mini type with 5 leads)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1501~RN1506
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2501
RN2502
RN2503
RN2504
RN2505
RN2506
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
―
―
2-3L1A
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2501~2506
RN2501~2506
RN2501~2504
RN2505, 2506
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
Tj
Tstg
Rating
−50
−50
−10
−5
−100
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
*
Total rating
1
2001-06-07
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
