SF5G42,SF5J42
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF5G42,SF5J42
MEDIUM POWER CONTROL APPLICATIONS
l
Repetitive Peak Off−State Voltage : V
DRM
= 400, 600V
Repetitive Peak Reverse Voltage
: V
RRM
= 400, 600V
l
Average On−State Current
l
JEDEC TO−220AB Package.
: I
T(AV)
= 5A
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
(RGK = 330Ω)
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive<5ms,
Tj = 0~125°C,
RGK = 330Ω)
SF5G42
SF5J42
SF5G42
V
RSM
SF5J42
I
T (AV)
I
T (RMS)
I
TSM
I t
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
SYMBOL
RATING
400
UNIT
V
DRM
V
RRM
V
600
500
V
720
5
7.8
80 (50Hz)
88 (60Hz)
32
0.5
0.05
5
−5
200
−40~125
−40~125
A
A
A
A s
W
W
V
V
mA
°C
°C
2
Average On−State Current
(Half Sine Waveform Tc = 91°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
JEDEC
JEITA
TOSHIBA
Weight: 2g
TO−220AB
―
13−10G1B
Note:
Should be used with gate resistance as follows.
1
2001-07-10
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
