SM1G43,SM1J43
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM1G43,SM1J43
AC POWER CONTROL APPLICATIONS
l
Repetitive Peak Off−State Voltage : V
DRM
= 400, 600V
l
R.M.S On−State Current
l
Higt Commutating (dv / dt)
: I
T (RMS)
=
1A
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM1G43
SM1J43
SYMBOL
V
DRM
I
T (RMS)
I
TSM
I t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
2
RATING
400
600
1.0
8 (50Hz)
8.8 (60Hz)
0.32
1
0.1
6
0.5
−40~125
−40~125
UNIT
V
A
A
A s
W
W
V
A
°C
°C
2
R.M.S On−State Current
(Full Sine Waveform Tc = 74°C)
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO−92
SC−43
13−5A1E
1
2001-07-10