SSM5H06FE
Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
SSM5H06FE
DC-DC Converter
•
•
Combined Nch MOSFET and Schottky Diode in one Package.
Small package
Unit: mm
1.6±0.05
1.2±0.05
0.2±0.05
Absolute Maximum Ratings
(Ta
=
25°C) MOSFET
1.6±0.05
1.0±0.05
0.5
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
(Note 2)
P
D
(Note 1)
T
ch
Rating
20
±10
100
200
150
150
Unit
V
V
mA
mW
°C
1
2
3
5
0.5
4
0.12±0.05
4.Cathode
5.Drain
⎯
⎯
2-2P1C
Absolute Maximum Ratings
(Ta
=
25°C) SCHOTTKY
DIODE
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
j
Rating
15
12
100
1 (50 Hz)
125
Unit
V
V
mA
A
°C
ESV
1.Gate
2.Source
3.Anode
JEDEC
JEITA
TOSHIBA
Absolute Maximum Ratings
(Ta
=
25°C) MOSFET,
DIODE COMMON
Characteristics
Storage temperature
Operating temperature
Symbol
T
stg
T
opr
(Note 3)
Rating
−55~125
−40~100
Unit
°C
°C
Weight: 3 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.135 mm
×
5)
0.3 mm
0.45 mm
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
0.55±0.05
1
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
