TA58L05, 06, 08, 09, 10, 12, 15F
I
B
– I
OUT
30
TA58L05F
VIN = 14 V
Tj = 25°C
1.0
I
B
– T
j
TA58L05F
VIN = 14 V
IOUT
=
0 A
(mA)
(mA)
I
B
Quiescent current
0.10
0.15
0.20
0.25
25
0.8
I
B
20
Quiescent current
0.6
15
0.4
10
5
0.2
0
0
0.05
0
-50
0
50
100
150
Output current
I
OUT
(A )
Junction temperature
T
j
(°C)
V
D
– I
OUT
0.6
0.6
V
D
– Tj
(V)
V
D
V
D
0.4
85°C
(V)
125°C
0.5
0.5
0.4
IOUT = 0.2 A
0.3
Dropout voltage
0.3
0.2
-40°C
0.1
Tj = 25°C
Dropout voltage
0.2
0.05 A
0.1
0
0
0.05
0.10
0.15
0.20
0.25
0
-50
0
50
100
150
Output current
I
OUT
(A)
Junction temperature
Tj
(°C)
I
PEAK
– Tj
1.0
0.8
I
PEAK
– V
D
I
PEAK
(A)
Peak output current
I
PEAK
(A)
TA58L05F
VIN = 14 V
0.8
0.6
0.6
Peak output current
0.4
0.4
0.2
0.2
TA58L05F
Tj = 25°C
0
0
10
20
30
0
-50
0
50
100
150
Junction temperature
Tj
(°C)
Dropout voltage
V
D
(V)
10
2006-11-02
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
