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TC7SG125FE 参数 Datasheet PDF下载

TC7SG125FE图片预览
型号: TC7SG125FE
PDF下载: 下载PDF文件 查看货源
内容描述: 总线缓冲器与3态输出 [Bus Buffer with 3-STATE Output]
分类和应用:
文件页数/大小: 8 页 / 167 K
品牌: TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
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TC7SG125FE
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SG125FE
Bus Buffer with 3-STATE Output
Features
High-level output current:
I
OH
/I
OL
= ±8 mA (min)
at V
CC
= 3.0 V
High-speed operation: t
pd
= 2.4 ns (typ.)
at V
CC
= 3.3 V,15pF
Operating voltage range: V
CC
= 0.9~3.6 V
5.5-V tolerant inputs.
3.6-V power down protection output.
(ESV)
質量:
0.003 g (標準)
Marking
Product name
Pin Assignment (top view)
B
G 1
5 V
CC
W
IN A 2
GND 3
4 OUT Y
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Power supply voltage
DC input voltage
DC output voltage
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Power supply voltage
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Value
−0.5~4.6
−0.5~7.0
−0.5~
4.6 (Note 1)
−0.5~
V
CC
+ 0.5 (Note 2)
−20
−20
(Note 3)
±25
±50
200
−65~150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT abusolute maximum rating must be observed.
Note 3: V
OUT
< GND
Note:
1
2007-11-01