TC7WG32FC
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7WG32FC
Dual 2-Input OR Gate
Features
•
•
•
•
•
High-level output current:
I
OH
/I
OL
= ±8 mA (min)
at V
CC
= 3 V
TC7WG32FC
High-speed operation: t
pd
= 2.8 ns (typ.)
at V
CC
= 3.3 V,15pF
Operating voltage range: V
CC
= 0.9~3.6 V
5.5-V tolerant inputs
3.6-V power down protection outputs
CSON8-P-0.4
Weight: 0.002 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/GND current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Value
−0.5~4.6
−0.5~7.0
−0.5~4.6
−0.5~V
CC
+
0.5
−20
−20
±25
±50
150
−65~150
(Note 4)
(Note 3)
(Note 1)
(Note 2)
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Marking
Product name
G32
Pin Assignment (top view)
Vcc
8
1Y
7
2B
6
2A
5
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: V
CC
= 0V
Note 2: High or Low State.
I
OUT
absolute maximum rating must be observed.
Note 3: V
OUT
< GND
Note 4: Mounted on an FR4 board.
2
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 11.56 mm )
1
1A
2
1B
3
2Y
4
GND
1
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
