TC7WH34FU/FK
Electrical Characteristics
DC Characteristics
Ta
=
25°C
Characteristics
Symbol
Test Condition
V
CC
(V)
2.0
High-level input voltage
V
IH
⎯
3.0~
5.5
2.0
Low-level input voltage
V
IL
⎯
3.0~
5.5
2.0
I
OH
= −50 μA
High-level output voltage
V
OH
V
IN
=
V
IH
I
OH
= −4
mA
I
OH
= −8
mA
3.0
4.5
3.0
4.5
2.0
I
OL
=
50
μA
Low-level output voltage
V
OL
V
IN
=
V
IL
I
OL
=
4 mA
I
OL
=
8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
=
5.5 V or GND
V
IN
=
V
CC
or GND
3.0
4.5
3.0
4.5
0~
5.5
5.5
Min
1.50
V
CC
×
0.7
⎯
⎯
1.9
2.9
4.4
2.58
3.94
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
2.0
3.0
4.5
⎯
⎯
0.0
0.0
0.0
⎯
⎯
⎯
⎯
Max
⎯
⎯
0.50
V
CC
×
0.3
⎯
⎯
⎯
⎯
⎯
0.1
0.1
0.1
0.36
0.36
±0.1
2.0
Ta
= −40~85°C
Min
1.50
V
CC
×
0.7
⎯
⎯
1.9
2.9
4.4
2.48
3.80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
0.50
V
CC
×
0.3
⎯
⎯
⎯
⎯
⎯
0.1
0.1
0.1
0.44
0.44
±1.0
20.0
μA
μA
V
V
V
Unit
V
AC Characteristics
(input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
3.3
±
0.3
Propagation delay time
t
pLH
t
pHL
⎯
5.0
±
0.5
Input capacitance
Power dissipation capacitance
C
IN
C
PD
⎯
(Note)
C
L
(pF)
15
50
15
50
Min
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
5.0
7.5
3.8
5.3
4
18
Max
7.1
10.6
5.5
7.5
10
⎯
Ta
= −40~85°C
Min
1.0
1.0
1.0
1.0
⎯
⎯
Max
8.5
12.0
6.5
8.5
10
⎯
pF
pF
ns
Unit
Note: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
=
C
PD
�½�V
CC
�½�f
IN
+
I
CC
/3
3
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
