TD62001~004P/AP/F/AF
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST
CIR−
CUIT
TEST CONDITION
V
CE
= 50 V, Ta = 25°C
V
CE
= 50 V, Ta = 85°C
I
CEX
1
V
CE
= 35 V, Ta = 25°C
V
CE
= 35 V, Ta = 85°C
V
CE
= 35 V, Ta = 25°C
V
CE
= 35 V, Ta = 75°C
I
OUT
= 350 mA, I
IN
= 500 µA
Collector−Emitter Saturation Voltage
V
CE (sat)
2
I
OUT
= 200 mA, I
IN
= 350 µA
I
OUT
= 100 mA, I
IN
= 250 µA
DC Current Transfer Ratio
TD62002
Input Current
(Output On)
TD62003
TD62004
Input Current
(Output Off)
P
AP, F, AF
TD62002
Input Voltage
(Output On)
V
CE
= 2 V
h
FE
= 800
I
IN (OFF)
4
I
IN (ON)
3
h
FE
2
V
CE
= 2 V, I
OUT
= 350 mA
V
IN
= 20 V, I
OUT
= 350 mA
V
IN
= 2.4 V, I
OUT
= 350 mA
V
IN
= 9.5 V, I
OUT
= 350 mA
I
OUT
= 500 µA, Ta = 75°C
I
OUT
= 500 µA, Ta = 85°C
I
OUT
= 350 mA
I
OUT
= 200 mA
V
IN (ON)
5
I
OUT
= 350 mA
I
OUT
= 200 mA
I
OUT
= 350 mA
I
OUT
= 200 mA
V
R
= 50 V, Ta = 25°C
V
R
= 50 V, Ta = 85°C
I
R
6
V
R
= 35 V, Ta = 25°C
V
R
= 35 V, Ta = 85°C
V
R
= 35 V, Ta = 25°C
V
R
= 35 V, Ta = 75°C
V
F
C
IN
P, F
Turn−On Delay
AP, AF
P, F
Turn−Off Delay
AP, AF
t
OFF
8
t
ON
8
7
―
V
OUT
= 35 V, R
L
= 87.5
Ω
C
L
= 15 pF
V
OUT
= 50 V, R
L
= 125
Ω
C
L
= 15 pF
V
OUT
= 35 V, R
L
= 87.5
Ω
C
L
= 15 pF
V
OUT
= 50 V, R
L
= 125
Ω
C
L
= 15 pF
I
F
= 350 mA
MIN
―
―
―
―
―
―
―
―
―
1000
―
―
―
50
50
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
TYP.
―
―
―
―
―
―
1.3
1.1
0.9
―
1.1
0.4
0.8
65
65
―
―
―
―
―
―
―
―
―
―
―
―
―
15
0.1
0.1
0.2
0.2
MAX
50
100
50
100
50
100
1.6
1.3
1.1
―
1.7
0.7
1.2
―
―
13.7
11.4
2.6
2.0
4.7
4.4
50
100
50
100
50
100
2.0
―
―
―
µs
―
―
V
pF
µA
V
µA
mA
V
µA
UNIT
AP, AF
Output Leakage
Current
F
P
TD62003
TD62004
AP, AF
Clamp Diode
Reverse Current
F
P
Clamp Diode Forward Voltage
Input Capacitance
4
2001-06-27
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
