TK10P60W
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK10P60W
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 0.327
Ω
(typ.)
by used to Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: V
th
= 2.7 to 3.7 V (V
DS
= 10 V, I
D
= 0.5 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
DPAK
25
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
(Note 1)
(Note 1)
(T
c
= 25)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
Rating
600
±30
9.7
38.8
80
121
2.5
9.7
38.8
150
-55 to 150
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-08-27
Rev.2.0
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
