TK15A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK15A60U
Switching Regulator Applications
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 0.24
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
⎪
= 8.5 S (typ.)
Low leakage current: I
DSS
= 100
μA
(V
DS
= 600 V)
Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
15
30
40
81
15
4
150
-55 to 150
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Unit
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
(Note 3)
JEDEC
JEITA
TOSHIBA
⎯
SC-67
2-10U1B
Weight: 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.125
62.5
Unit
2
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 0.63 mH, R
G
= 25Ω, I
AR
= 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
1
2009-09-29
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
