TK20S04K3L
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
=
±16
V, V
DS
= 0 V
V
DS
= 40 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 6 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
Min
40
20
2.0
Typ.
15
11
Max
±10
10
3.0
26
14
mΩ
V
Unit
µA
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
See Figure 6.2.1.
Test Condition
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
820
110
190
8
16
6
24
Max
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
25
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Q
g
Q
gs
Q
gd
Test Condition
V
DD
≈
32 V, V
GS
= 10 V, I
D
= 20 A
Min
Typ.
18
12
6
Max
Unit
nC
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 4)
(Note 4)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 20 A, V
GS
= 0 V
I
DR
= 20 A, V
GS
= 0 V
-dI
DR
/dt = 50 A/µs
Min
Typ.
30
14
Max
20
40
-1.2
V
ns
nC
Unit
A
Note 4: Ensure that the channel temperature does not exceed 175.
3
2012-02-02
Rev.2.0
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
