TK25A10K3
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSIV)
TK25A10K3
Swiching Regulator Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 31 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 50 S (typ.)
Low leakage current: I
DSS
= 10
μA
(max) (V
DS
= 100 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
100
100
±20
25
50
25
39
25
1.72
150
−55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1: Gate
2: Drain
3: Source
JEDEC
JEITA
TOSHIBA
⎯
SC-67
2-10U1B
Note:
Weight: 1.7 g (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
=
25 V, T
ch
=
25°C, L
=
100
μH,
R
G
=
25
Ω,
I
AR
=
25 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
5.0
62.5
Unit
°C / W
°C / W
1
2
3
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2009-03-23
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
