Electrical Characteristics
Parameter
RF – Frequency / US
LO – Frequency / US
(1)
GaAs MMIC
min
1930
1780
1840
typ
-
-
-
-
-
-
-
-
-
CMH192
max
1990
1940
1870
1820
250
0.0
4.0
V
DD
0.2
Unit
MHz
MHz
MHz
MHz
MHz
dBm
V
V
V
RF – Frequency / Korean
LO – Frequency / Korean
IF Frequency range
LO Power Input
Supply Voltage (Vdd)
High Logic Level (H)
Low Logic Level (L)
1) High-side LO is also supported
(1)
1590
50
-7.0
2.7
V
DD
– 0.2
0.0
LNA – Performance of LNA
Test conditions:
T
a = 25°C,
V
DD= 2.7 V, PRF= -22 dBm,
f
RF = 1960 MHz, LOW=GND, HIGH=Vdd
Mode – High Gain, High Linearity
Operating Current
Noise Figure
Gain
Input / Output return loss
3rd Order Input Intercept Point
Mode – High Gain, Reduced Current
Operating Current
Noise Figure
Gain
Input / Output return loss
3rd Order Input Intercept Point
Mode – Low Gain, By-Pass Mode
Operating Current
Noise Figure
Gain
Input / Output return loss
3rd Order Input Intercept Point
min
min
min
typ
7
1.1
12.5
10
8.5
Typ
5
1.2
12.3
10
7.5
Typ
0
4.5
5
10
25
max
max
max
Unit
mA
dB
dB
dB
dBm
Unit
mA
dB
dB
dB
dBm
Unit
mA
dB
dB
dB
dBm
CMH192 – Datasheet (October 1
st
, 2002)
p
g.
2/11
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
