Transys
Electronics
L I M I T E D
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
P
D:
150
mW (Tamb=25℃)
SOT-523
Forward Current
75 m A
I
F:
Reverse Voltage
85
V
V
R
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
BAS16T Marking: A2
BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Symbol
V
(BR)
I
R1
Reverse voltage
leakage current
I
R2
unless otherwise specified)
Test
conditions
MIN
85
2
0.03
715
855
1000
1250
1.5
4
mV
MAX
UNIT
V
I
R
= 100
µ
A
V
R
=75V
V
R
=25V
I
F
=1mA
µ
A
µ
A
Forward
voltage
V
F
I
F
=10mA
I
F
=50mA
I
F
=150mA
Diode
capacitance
C
D
t
rr
V
R
=0V, f=1MHz
pF
nS
Reverse recovery time
TRSYS [ TRANSYS Electronics Limited ]
