MCR100 SERIES
Silicon Controlled Rectifier
V
RRM
= 100-600V, I
F(RMS)
= 0.8A
G
K
A
Symbol
MAXIMUM RATINGS
(Tj = 25
O
C unless stated otherwise)
Symbol
MCR100-3
MCR100-4
200
MCR100-6
400
0.8 at tc = 85
O
C
10
0.415
5
0.1
0.1
1.0
-40 to +150
-40 to +110
MCR100-8
600
Parameter
Repetitive Peak Off-State Voltage
On-State RMS Current
Peak Non-Repetitive Surge Current
I
2
T for Fusing 8.3ms
Peak Reverse Gate Voltage
Peak Gate Current
Forward Average Gate Power
Forward Peak Gate Power
Maximum Storage Temperature Range
Maximum Junction Temperature Range
V
RRM
I
T
(RMS)
I
TSM
I
2
T
V
GRM
I
GM
P
G(AV)
P
GM
T
(STG)
Tj
100
Unit
Volt
Amp
Amp
A
2
/S
Volt
Amp
Watt
Watt
O
C
C
O
ELECTRICAL CHARACTERISICS at
Parameter
Peak Forward On-State Voltage
Repetitive Peak Reverse Current
Gate Trigger Voltage
Gate Trigger Current
Latch Current
Holding Current
Thermal Resistance (Junction to Case)
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Current
Tj = 25 C Maximum. Unless stated Otherwise
Condition
Symbol
V
TM
I
RRM
V
GT
I
GT
I
L
I
H
R
TH (J-c)
dV/dt
dA/dt
Mechanical Outline
0.205(5.20) max
0.175 (4.45) min
0.165(4.19) max
0.125(3.18) min
Value
Min
Typ
Max
1.7
Unit
Volt
Volt
µA
I
TM
= 1.0 Amps
V
R
= V
RRM
. t
J
=110 C
O
100
0.62
40
0.60
0.50
0.80
200
10.0
5.0
75
20
35
50
mA
mA
O
C/W
V/µS
A/µS
1
Cathode
2
Gate
3
Anode
1
2
3
0.210(5.33) max
0.170 (4.32) min
Case:TO - 92
0.500(12.70) min
0.021(50.533) max
0.016 (0.407) min
0.055(1.39) max
0.045 (1.15) min
0.135(3.43) min
0.055(1.39) max
0.045 (1.15) min
All Dimensions in Inches (Millimeters)
Third Angle Projection
0.105(2.66) max
0.080(2.04) min
TRSYS [ TRANSYS Electronics Limited ]
