Transys
Electronics
L I M I T E D
SOT-323 Plastic-Encapsulated Transistors
SOT-323
MMSTA42
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
0.2
W (Tamb=25℃)
Collector current
0.3
A
I
CM:
Collector-base voltage
310
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Unit: mm
unless otherwise specified)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
FE(1)
Test
conditions
MIN
310
305
5
0.25
0.1
60
100
75
0.2
0.9
V
V
200
MAX
UNIT
V
V
V
Ic= 100
µ
A, I
E
=0
Ic= 1 mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
=200V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20 mA, I
B
= 2mA
I
C
= 20 mA, I
B
=2mA
V
CE
= 20V, I
C
= 10mA
µ
A
µ
A
DC current gain
H
FE(2)
H
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
Transition frequency
f
T
f=
30MHz
50
MHz
DEVICE MARKING
MMSTA42=K3M
TRSYS [ TRANSYS Electronics Limited ]
