1N4148/1N4448/1N914B
500mW High Speed Switching Diode
Small Signal Diode
DO-35 Axial Lead
HERMETICALLY SEALED GLASS
Features
Fast switching device(T
rr
<4.0nS)
Through-hole device type mounting
Moisture sensitivity level 1
Solder hot dip Tin(Sn) lead finish
Pb free version and RoHS compliant
All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
A
D
C
B
Mechanical Data
Case : DO-35 package (SOD-27)
High temperature soldering guaranteed : 260°C/10s
Polarity : Indicated by cathode band
Weight : 109 ± 4 mg
Dimensions
A
B
C
D
Unit (mm)
Min
0.45
3.05
25.4
1.53
Max
0.55
5.08
38.1
2.28
Unit (inch)
Min
Max
0.018 0.022
0.120 0.200
1.000 1.500
0.060 0.090
Ordering Information
Part No.
1Nxxxx A0
1Nxxxx R0
Package
DO-35
DO-35
Packing
5Kpcs / Ammo
10Kpcs / 14" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Forward Surge Current
Pulse Width 8.3ms
Non-Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
P
D
V
RRM
I
FSM
I
FM
I
O
RθJA
T
J
, T
STG
Value
500
100
2.0
450
150
240
-65 to + 150
Units
mW
V
A
mA
mA
°C/W
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
1N4448, 1N914B
1N4148
1N4448, 1N914B
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 2)
I
F
=5.0mA
I
F
=10.0mA
I
F
=100.0mA
V
R
=20V
V
R
=75V
V
R
=0, f=1.0MHz
I
R
C
J
Trr
V
F
0.62
0.72
1.0
1.0
25
5.0
4.0
4.0
nA
μA
pF
ns
V
I
R
=100uA
I
R
=5uA
Symbol
V
(BR)
Min
100
75
Max
Units
V
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I
F
=10mA, I
R
=60mA, R
L
=100Ω, I
RR
=1mA
Version : C09
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
