BAS21 / A / C / S
225mW SMD Switching Diode
Small Signal Diode
SOT-23
A
F
Features
Fast switching speed
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
B
E
C
D
G
Mechanical Data
Case :SOT-23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
3.00
1.40
0.50
2.00
2.55
1.20
Unit (inch)
Min
0.110
0.047
0.012
0.071
0.089
0.035
Max
0.118
0.055
0.020
0.079
0.100
0.043
0.550 REF
0.022 REF
BAS21
BAS21S
BAS21C
BAS21A
Ordering Information
Part No.
BAS21/A/C/S RF
Package
SOT-23
Packing
3Kpcs/ 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
(Note 2)
Symbol
P
D
V
RRM
I
FRM
I
O
I
FSM
RθJA
T
J
, T
STG
Value
225
250
625
200
1
500
-55 to + 150
Units
mW
V
mA
mA
A
°C/W
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
I
R
=
I
F
=
I
F
=
V
R
=
100μA
100mA
200mA
200V
f=1.0MHz
Symbol
V
(BR)
V
F
I
R
C
J
Trr
Min
250
-
-
-
-
-
Max
-
1.00
1.25
100
5
50.0
Units
V
V
V
μA
pF
ns
V
R
=1V,
Junction Capacitance
Reverse Recovery Time I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1
μsec
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : B09
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
