BAS40 / -04 / -05 / -06
200mW, Low V
F,
SMD Schottky Barrier Diode
Small Signal Diode
A
F
Features
Metal-on-silicon Shcottky Barrier
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
B
E
C
D
G
Mechanical Data
Case : Flat lead SOT 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
3.00
1.40
0.50
2.00
2.55
1.20
Unit (inch)
Min
0.110
0.047
0.012
0.071
0.089
0.035
Max
0.118
0.055
0.020
0.079
0.100
0.043
0.550 REF
0.022 REF
BAS40
BAS40-04
BAS40-05
BAS40-06
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
(Note 2)
Symbol
P
D
V
RRM
V
R
I
FRM
I
O
I
FSM
RθJA
T
J
, T
STG
Value
200
40
40
200
200
0.6
357
-65 to + 125
Units
mW
V
V
mA
mA
A
°C/W
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
I
R
=
I
F
=
I
F
=
I
F
=
V
R
=
10μA
1mA
10mA
40mA
30V
f=1.0MHz
I
R
C
J
Trr
V
F
Symbol
V
(BR)
Min
40
-
-
-
-
-
-
Max
-
0.38
0.50
1.00
0.2
5
5.0
μA
pF
ns
V
Units
V
V
R
=1V,
Junction Capacitance
Reverse Recovery Time I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : C09
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
