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EGF1D 参数 Datasheet PDF下载

EGF1D图片预览
型号: EGF1D
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0 AMP 。表面安装玻璃钝化结高效整流二极管 [1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers]
分类和应用: 整流二极管高效整流二极管光电二极管
文件页数/大小: 2 页 / 51 K
品牌: TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
 浏览型号EGF1D的Datasheet PDF文件第2页  
EGF1A
THRU
EGF1M
1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
Ideal for surface mount automotive applications
Glass passivated cavity-free junction
Easy pick and place
Capable of meeting enviromental standard of
MIL-S-19500
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Compete device submersible temperature of 265
O
C
for 10 sec in solder bath.
SMA/DO-214AC
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.120 gram
.091(2.30)
.078(1.99)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
.056(1.41)
.035(0.90)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
EGF EGF EGF EGF EGF EGF EGF EGF
Units
Type Number
1A
1B
1C
1D
1G
1J
1K
1M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @T
L
=125℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current
@T
A
=25℃ at Rated DC Blocking Voltage
@ T
A
=125℃
Maximum Reverse Recovery Time
(Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θ
JA
R
θ
JL
T
J
50
35
50
100 150 200 400 600 800 1000
70 105 140 280 420 560 700
100 150 200 400 600 800 1000
1.0
30
1.0
1.3
5
100
50
15
85.0
30.0
-65 to +175
-65 to +175
75
1.7
V
V
V
A
A
V
uA
uA
nS
pF
℃/W
T
STG
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Thermal Resistance from Junction to Ambient and from Junction to Lead P.C.B. Mounted on
0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Areas.
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