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ES1J 参数 Datasheet PDF下载

ES1J图片预览
型号: ES1J
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0 AMP 。超快表面贴装整流器 [1.0 AMP. Super Fast Surface Mount Rectifiers]
分类和应用: 二极管光电二极管IOT
文件页数/大小: 2 页 / 48 K
品牌: TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
 浏览型号ES1J的Datasheet PDF文件第2页  
ES1A
THRU
ES1J
1.0 AMP. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
1.0 Ampere
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260
O
C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.062(1.58)
.050(1.27)
SMA/DO-214AC
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.103(2.61)
.078(1.99)
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.064 gram
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ES ES ES ES ES ES ES ES
Units
Type Number
1A 1B 1C 1D 1F 1G 1H 1J
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
50 100 150 200 300 400 500 600
Maximum RMS Voltage
V
V
RMS
35 70 105 140 210 280 350 420
Maximum DC Blocking Voltage
50 100 150 200 300 400 500 600
V
V
DC
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=100℃
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
I
(AV)
I
FSM
V
F
I
R
0.95
1.0
30
1.3
5.0
100
35
10
85
35
-55 to +150
-55 to + 150
8
1.7
A
A
V
uA
uA
nS
pF
℃/W
Trr
Cj
R
θ
JA
R
θ
JL
T
J
T
STG
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2”(5 x 5mm) Copper Pad Area.
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