ES3A - ES3J
3.0AMPS Surface Mount Super Fast Rectifiers
SMC/DO-214AB
Pb
RoHS
COMPLIANCE
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain rellef, Ideal for automated placement
Easy pick and place
Esuper fast recovery time for high efficiency
High temperature soldering guaranteed:
260℃/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
High reliability grade (AEC Q101 specified)
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
Weight: 0.21 grams
Packing: 16mm tape per EIA STD RS-481
Dimensions in inches and (millimeters)
Marking Diagram
ES3X = Specific Device Code
G
Y
M
= Green Compound
= Year
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbo
Type Number
l
V
RRM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified see fig. 1
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (IEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@3A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25
℃
@ T
A
=100
℃
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
Trr
R
θjA
R
θjL
T
J
T
STG
45
35
47
12
- 55 to + 150
- 55 to + 150
O
ES
3A
50
35
50
ES
3B
100
70
100
ES
3C
150
105
150
ES
3D
200
140
200
3
ES
3F
300
210
300
ES
3G
400
280
400
ES
3H
500
350
500
ES
3J
600
420
600
Units
V
V
V
A
A
100
0.95
10
500
30
1.3
1.7
V
uA
pF
nS
C/W
O
O
Typical Junction Capacitance (Note 2)
Typical Reverse Recovery Time (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
C
C
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Version:F11
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
