CREAT BY ART
MBR1035 - MBR10200
10.0 AMPS. Schottky Barrier Rectifiers
TO-220AC
Pb
RoHS
COMPLIANCE
Features
UL Recognized File # E-326243
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.88 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBR10XX
G
Y
WW
= Specific Device Code
= Green Compound
= Year
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=125℃
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125
℃
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at: (Note 2)
IF=10A, T
A
=25℃
IF=10A, T
A
=125℃
Maximum Instantaneous Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25
℃
@ T
A
=125
℃
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
V
F
MBR
1035
35
24
35
MBR
1045
45
31
45
MBR
1050
50
35
50
MBR
1060
60
42
60
10
20
MBR
1090
90
63
90
MBR MBR MBR
10100 10150 10200
100
150
200
70
100
105
150
140
200
Units
V
V
V
A
A
A
150
1.0
0.70
0.57
0.80
0.70
0.1
10
10,000
500
3
- 65 to + 150
- 65 to + 175
O
0.5
0.85
0.71
6
1.05
-
A
V
I
R
dV/dt
Cj
R
θJC
T
J
T
STG
15
mA
mA
V/us
pF
C/W
O
C
C
O
Version:H11
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
