MBR1535CT
THRU
MBR15100CT
15.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 100 Volts
Current
15.0 Amperes
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for transient protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
TO-220
Mechanical Data
Cases: JEDEC TO-220 molded plastic body
Terminals: Leads solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
C
=105 C
Peak Repetitive Forward Current (Rated V
R
, Square Wave,
20KHz) at Tc=105
o
C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=7.5A, Tc=25
O
C
I
F
=7.5A, Tc=125
O
C
I
F
=15A, Tc=25
O
C
I
F
=15A, Tc=125
O
C
Maximum Instantaneous Reverse Current @ Tc=25℃
at Rated DC Blocking Voltage (Note 2)
@ Tc=125℃
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
Maximum Thermal Resistance Per Leg (Note 3)
MBR
50
35
50
15
MBR
60
42
60
MBR
90
63
90
MBR
100
70
100
Units
V
V
V
A
A
A
1535CT 1545CT 1550CT 1560CT 1590CT
15100CT
35
24
35
45
31
45
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
I
R
dV/dt
Cj
R
θ
JA
R
θ
JC
T
J
T
STG
15.0
150
1.0
0.57
0.84
0.72
–
0.1
15.0
400
10
1.5
-65 to +150
-65 to +175
0.75
0.65
–
–
1.0
50.0
1,000
0.5
0.92
0.82
–
–
0.1
–
200
A
V
mA
mA
V/uS
pF
℃/W
℃
℃
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
- 148 -
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
