MBR2035CT - MBR20150CT
20.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Pl
astic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR MBR
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
C
=135 C
Peak Repetitive Forward Current (Rated V
R
, Square Wave,
o
20KHz) at Tc=135 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
O
IF=10A, TC=25 C
O
IF=10A, TC=125 C
O
IF=20A, TC=25 C
IF=20A, TC=125
O
C
Maximum Instantaneous Reverse Current @ Tc=25℃
at Rated DC Blocking Voltage
@ Tc=125℃
Voltage Rate of Change, (Rated V
R
)
Typical Junction Capacitance
Typical Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Maximum Ratings and Electrical Characteristics
MBR
2060
CT
60
42
60
20
20
150
1.0
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
I
R
dV/dt
Cj
R
θJC
T
J
T
STG
2035
CT
35
24
35
2045
CT
45
31
45
2050
CT
50
35
50
MBR MBR MBR
Units
2090 20100 20150
CT
CT
CT
V
90
100
150
V
63
70
105
V
90
100
150
A
A
A
0.5
0.85
0.75
0.95
0.85
0.99
0.87
1.23
1.10
A
V
mA
mA
V/uS
pF
o
C/W
o
C
o
C
0.1
15
400
1.0
0.1
10
10,000
320
2.0
-65 to +150
-65 to +175
5.0
Storage Temperature Range
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.
Version: A06
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
