MBRF1635
THRU
MBRF16100
Isolation 16.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 100 Volts
Current
16.0 Amperes
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
ITO-220AC
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.112(2.85)
.100(2.55)
.606(15.5)
.583(14.8)
.063(1.6)
MAX
.161(4.1)
.146(3.7)
Mechanical Data
Cases: ITO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
.110(2.8)
.098(2.5)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
2
PIN 1
PIN 2
Case Positive
.100(2.55)
.100(2.55)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol MBRF MBRF MBRF MBRF MBRF MBRF
Units
Type Number
1635 1645 1650 1660 1690 16100
Maximum Recurrent Peak Reverse Voltage
35
45
50
60
90
100
V
V
RRM
Maximum RMS Voltage
24
31
35
42
63
70
V
V
RMS
Maximum DC Blocking Voltage
35
45
50
60
90
100
V
V
DC
Maximum Average Forward Rectified Current
at Tc=125
O
C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=125
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
I
F
=16A, T
C
=25
o
C
I
F
=16A, T
C
=125
o
C
Maximum Instantaneous Reverse Current
@ Tc =25℃ at Rated DC Blocking Voltage (Note 2)
@ Tc=125℃
Voltage Rate of Change (Rated V
R
)
M
aximum
T
ypical
T
hermal Resistance(Note 3)
Typical Junction Capacitance
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
I
R
0.2
40
1.0
0.63
0.57
16
32.0
150
0.5
0.75
0.65
0.85
0.75
A
A
250
A
A
V
mA
mA
V/uS
℃/W
pF
℃
℃
dV/dt
R
θ
JC
Cj
T
J
T
STG
560
1.0
50.0
10,000
3.0
-65 to +150
-65 to +175
0.2
-
420
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
- 116 -
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
