MBRS2535CT
THRU
MBRS2560CT
25.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 60 Volts
Current
25.0 Amperes
Features
For surface mounted application
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds at terminals
D
2
PAK
Mechanical Data
Cases: JEDEC D
2
PAK molded plastic
Terminals: Leads solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.06 ounce, 1.70 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBRS
Symbol
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
T
C
=130
o
C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=130
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=12.5A, Tc=25
O
C
I
F
=12.5A, Tc=125
O
C
I
F
=25A, Tc=25
O
C
I
F
=25A, Tc=125
O
C
Maximum Instantaneous Reverse Current @ Tc=25℃
@ Tc=125℃
at
R
ated
DC
Blocking Voltage Per Leg
(Note 2)
Voltage Rate of Change, (Rated V
R
)
M
aximum
T
hermal
R
esistance
P
er
L
eg (
N
ote 3)
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
2535CT
35
24
35
MBRS
2545CT
45
31
45
25
MBRS
2550CT
50
35
50
MBRS
2560CT
60
42
60
Units
V
V
V
A
A
A
25.0
200
1.0
–
–
0.82
0.73
0.5
0.75
0.65
–
–
A
V
I
R
dV/dt
R
θ
JC
T
J
T
STG
0.2
40.0
1,000
1.0
-65 to +150
-65 to +175
1.0
50.0
mA
mA
V/uS
℃/W
℃
℃
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg
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TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
