CREAT BY ART
SMA/DO-214AC
1.0AMP Surface Mount Schottky Barrier Rectifier
SS12 - SS115
Pb
RoHS
COMPLIANCE
Features
UL Recognized File # E-326243
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classigication 94V-0
Epitaxial construction
High temperature soldering guaranteed: 260℃
/10s at terminals
High reliability grade (ACE-Q101 qualified)
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: JEDEC SMA/DO-214AC Molded plastic
Terminal: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packaging: 12 mm tape per EIA STD RS-481
Weight: 0.066 gram
Dimensions in inches and (millimeters)
Marking Diagram
SS1X
G
Y
M
= Specific Device Code
= Green Compound
= Year
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@ 1.0A @ 25℃
@ 1.0A @100℃
Maximum Reverse Current @ Rated VR T
A
=25
℃
T =100℃
A
T =125
℃
A
Typical Junction Capecitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test with PW=300u sec, 1% Duty Cycle
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SS
12
20
14
20
SS
13
30
21
30
SS
14
40
28
40
SS
15
50
35
50
1.0
30
SS
16
60
42
60
SS
19
90
63
90
SS
110
100
70
100
SS
115
150
105
150
Unit
V
V
V
A
A
V
F
0.5
0.4
0.4
0.75
0.65
0.80
0.70
0.1
0.95
0.85
V
mA
mA
mA
pF
O
I
R
C
j
R
θjL
R
θjA
T
J
T
STG
10
-
5
-
50
28
88
-
2
C/W
O
O
- 65 to + 125
- 65 to + 150
- 65 to + 150
C
C
Note2: Measured at 1 MHz and Applied Reverse Voltagr of 4.0V D.C.
Note3: Mount on Cu-Pad Size 5mm × 5mm on P.C.B.
Version:G11
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
