TSM3424
30V N-Channel MOSFET
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m )
30
30 @ V
GS
= 10V
42 @ V
GS
= 4.5V
I
D
(A)
6.7
5.7
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM3424CX6 RF
TSM3424CX6 RFG
Package
SOT-26
SOT-26
Packing
3Kpcs / 7” Reel
3Kpcs / 7” Reel
N-Channel MOSFET
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Ta = 25 C
Ta = 75 C
Limit
30
±20
6.7
30
1.7
2.0
Unit
V
V
A
A
A
W
1.3
+150
-55 to +150
o
o
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
10 sec.
Symbol
RӨ
JC
RӨ
JA
Limit
30
80
Unit
o
o
C/W
C/W
1/6
Version: C11
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
