SMD Type
Transistors
IC
Product specification
2SD1820
Features
Low collector-emitter saturation voltage V
CE(sat).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
30
25
5
500
1
150
150
-55 to +150
Unit
V
V
V
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
Testconditons
I
C
= 10 ìA, I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10 ìA, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
C
= 150 mA
85
0.35
200
6
15
Min
30
25
5
0.1
340
0.6
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA
f
T
C
ob
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
Rank
h
FE
WQ
Q
85 170
WR
R
120 240
WS
S
170 340
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